Product Summary
The BFR193RCs is an NPN Silicon RF Transistor.
Parametrics
BFR193RCs absolute maximum ratings: (1)Collector-emitter voltage VCEO 12 V; (2)Collector-emitter voltage VCES 20V; (3)Collector-base voltage VCBO 20V; (4)Emitter-base voltage VEBO 2V; (5)Collector current IC 80 mA; (6)Base current IB 10mA; (7)Total power dissipation, Ptot 580 mW; (8)Junction temperature Tj 150℃; (9)Ambient temperature TA -65 to 150℃; (10)Storage temperature Tstg -65to 150℃.
Features
BFR193RCs features: (1)For low noise, high-gain amplifiers up to 2 GHz; (2)For linear broadband amplifiers; (3)fT = 8 GHz F = 1.3 dB at 900 MHz.
Diagrams
BFR184P1 |
CONN RCPT 4POS W/PINS BULKHEAD |
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BFR1-BL1 |
Honeywell |
Basic / Snap Action / Limit Switches LIMIT SWITCH |
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BFR1-BW1 |
Honeywell |
Basic / Snap Action / Limit Switches LIMIT SWITCH |
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BFR1-BW4 |
Honeywell |
Basic / Snap Action / Limit Switches LIMIT SWITCH |
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BFR18-4P1-A95 |
CONN RCPT 4POS W/PINS BULKHEAD |
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BFR189P1 |
CONN RCPT 7POS W/PINS BULKHEAD |
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