Product Summary

The BFR193RCs is an NPN Silicon RF Transistor.

Parametrics

BFR193RCs absolute maximum ratings: (1)Collector-emitter voltage VCEO 12 V; (2)Collector-emitter voltage VCES 20V; (3)Collector-base voltage VCBO 20V; (4)Emitter-base voltage VEBO 2V; (5)Collector current IC 80 mA; (6)Base current IB 10mA; (7)Total power dissipation, Ptot 580 mW; (8)Junction temperature Tj 150℃; (9)Ambient temperature TA -65 to 150℃; (10)Storage temperature Tstg -65to 150℃.

Features

BFR193RCs features: (1)For low noise, high-gain amplifiers up to 2 GHz; (2)For linear broadband amplifiers; (3)fT = 8 GHz F = 1.3 dB at 900 MHz.

Diagrams

BFR193RCs block diagram

BFR106
BFR106
Other

Data Sheet
Negotiable 
BFR184P1
BFR184P1

CONN RCPT 4POS W/PINS BULKHEAD
Data Sheet
0-1: $117.11
1-5: $110.61
5-10: $104.10
10-25: $91.09
25-50: $81.33
BFR180
BFR180
Other

Data Sheet
Negotiable 
BFR181TW
BFR181TW
Other

Data Sheet
Negotiable 
BFR181W
BFR181W
Other

Data Sheet
Negotiable 
BFR182
BFR182
Other

Data Sheet
Negotiable