BFG410W

double polysilicon wideband transistor, SOT-343, 10 V, 12 mA, 54 mW

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Price:: US $0.05~1.00 / piece [Get Latest Price]

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	US $0.05~1.00

PartNumber:: BFG410W

Brand:: Philips Electronics India Limited - PHILIPS | Pack: SOT | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-11-02

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Part Number:BFG410W
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Product Summary

The BFG410W is an NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. The applications of the BFG410W are (1)RF front end; (2)Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.); (3)Radar detectors; (4)Pagers; (5)Satellite television tuners (SATV); (6)High frequency oscillators.

Parametrics

BFG410W absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 10 V; (2)VCEO collector-emitter voltage open base: 4.5 V; (3)VEBO emitter-base voltage open collector: 1V; (4)IC collector current (DC): 12 mA; (5)Ptot total power dissipation: 54 mW; (6)Tstg storage temperature: -65 yo +150℃; (7)Tj operating junction temperature: 150℃.

Features

BFG410W features: (1)Very high power gain; (2)Low noise figure; (3)High transition frequency; (4)Emitter is thermal lead; (5)Low feedback capacitance.