(China (Mainland))
Product Summary
The FDC6305N is an N-Channel low threshold 2.5V specified MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications of the FDC6305N are Load switch, DC/DC converter and Motor driving.
Parametrics
FDC6305N absolute maximum ratings: (1)VDSS Drain-Source Voltage: 20 V; (2)VGSS Gate-Source Voltage: ±8V; (3)ID Drain Current: 2.7 A; (4)PD Power Dissipation: 0.96 W; (5)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDC6305N features: (1)2.7 A, 20 V. RDS(ON)= 0.08 Ω @ VGS = 4.5 V, RDS(ON) = 0.12 Ω @ VGS = 2.5 V; (2)Low gate charge (3.5nC typical); (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDC6305N |
Fairchild Semiconductor |
MOSFET SSOT-6 N-CH 20V |
Data Sheet |
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FDC6305N_Q |
Fairchild Semiconductor |
MOSFET SSOT-6 N-CH 20V |
Data Sheet |
Negotiable |
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