(China (Mainland))
Product Summary
The FMMT717 is a PNP silicon power (switching) transistor.
Parametrics
FMMT717 absolute maximum ratings: (1)Collector-Base Voltage VCBO: -12V; (2)Collector-Emitter Voltage VCEO: -12V; (3)Emitter-Base Voltage VEBO: -5V; (4)Peak Pulse Current ICM: -10A; (5)Continuous Collector Current IC: -2.5A; (6)Base Current IB: -500 mA; (7)Power Dissipation: 625 mW; (8)Operating and Storage Temperature Range Tj, Tstg: -55 to +150℃.
Features
FMMT717 features: (1)625mW power dissipation; (2)IC CONT 2.5A; (3)IC Up To 10A Peak Pulse Current; (4)Excellent hfe Characteristics Up To 10A (pulsed); (5)Extremely Low Saturation Voltage E.g. 10mV Typ.; (6)Exhibits extremely low equivalent on-resistance; RCE(sat).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FMMT717TA |
Diodes Inc. |
Transistors Bipolar (BJT) PNP SuperSOT |
Data Sheet |
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FMMT717TC |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) PNP SuperSOT |
Data Sheet |
Negotiable |
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FMMT717 |
Other |
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Data Sheet |
Negotiable |
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