Product Summary
The IMZ4 is a General purpose transistor.
Parametrics
IMZ4 absolute maximum ratings: (1)Collector-base voltage, VCBO: 40V; (2)Collector-emitter voltage, VCEO: 32V; (3)Emitter-base voltage, VEBO: 5V; (4)Collector current, IC: 500mA; (5)Junction temperature, Tj: 150℃; (6)Storage temperature, Tstg: 150℃; (7)Collector power dissipation: 300mW.
Features
IMZ4 features: (1)Includes a 2SA1036K and a 2SC411K transistor in a SMT package; (2)Mounting possible with SMT3 automatic mounting machines; (3)Transistor elements are independent, eliminating interference; (4)High collector current. IC=500mA; (5)Mounting cost and area can be cut in half.
Diagrams
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![]() IMZ4T108 |
![]() ROHM Semiconductor |
![]() Transistors Bipolar (BJT) NPN/PNP 32V 500MA |
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![]() IMZ4 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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