Product Summary

The IRLML6302 is a rectifier. The IRLML6302TR utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

Parametrics

IRLML6302 absolute maximum ratings: (1)VDS Drain- Source Voltage: -20 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -3.7 A; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ -4.5V: -2.2 A; (4)IDM Pulsed Drain Current: -22 A; (5)PD @TA = 25℃ Power Dissipation: 1.3 W; (6)PD @TA = 70℃ Power Dissipation: 0.8 W; (7)Linear Derating Factor: 0.01 W/℃; (8)EAS Single Pulse Avalanche Energy: 11 mJ; (9)VGS Gate-to-Source Voltage: ±12 V; (10)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

IRLML6302 features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching.

Diagrams

IRLML6302 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLML6302
IRLML6302
Other

Data Sheet
Negotiable 
IRLML6302GTRPBF
IRLML6302GTRPBF
International Rectifier
MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl
Data Sheet
0-1: $0.25
1-25: $0.14
25-100: $0.09
100-250: $0.08
IRLML6302TRPBF
IRLML6302TRPBF
International Rectifier
MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl
Data Sheet
0-1: $0.28
1-25: $0.16
25-100: $0.10
100-250: $0.09
IRLML6302TR
IRLML6302TR

MOSFET P-CH 20V 780MA SOT-23
Data Sheet
Negotiable