Product Summary
The P-Channel MOSFET IRLML6402 from International Rectifier utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce the IRLML6402 with the smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows the IRLML6402 to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Parametrics
IRLML6402 absolute maximum ratings: (1)VDS Drain Source Voltage: -20 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -3.7A; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ -4.5V: -2.2 A; (4)IDM Pulsed Drain Current: -22A; (5)PD @TA = 25℃ Power Dissipation: 1.3W; (6)PD @TA = 70℃ Power Dissipation: 0.8W; (7)EAS Single Pulse Avalanche Energy: 11 mJ; (8)VGS Gate-to-Source Voltage: ± 12 V; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
IRLML6402 features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRLML6402 |
Other |
Data Sheet |
Negotiable |
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IRLML6402GTRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl |
Data Sheet |
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IRLML6402TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl |
Data Sheet |
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IRLML6402TR |
MOSFET P-CH 20V 3.7A SOT-23 |
Data Sheet |
Negotiable |
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