Product Summary

The P-Channel MOSFET IRLML6402 from International Rectifier utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce the IRLML6402 with the smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows the IRLML6402 to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Parametrics

IRLML6402 absolute maximum ratings: (1)VDS Drain Source Voltage: -20 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -3.7A; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ -4.5V: -2.2 A; (4)IDM Pulsed Drain Current: -22A; (5)PD @TA = 25℃ Power Dissipation: 1.3W; (6)PD @TA = 70℃ Power Dissipation: 0.8W; (7)EAS Single Pulse Avalanche Energy: 11 mJ; (8)VGS Gate-to-Source Voltage: ± 12 V; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

IRLML6402 features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching.

Diagrams

IRLML6402 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLML6402
IRLML6402
Other

Data Sheet
Negotiable 
IRLML6402GTRPBF
IRLML6402GTRPBF
International Rectifier
MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl
Data Sheet
0-1: $0.36
1-25: $0.20
25-100: $0.13
100-250: $0.12
IRLML6402TRPBF
IRLML6402TRPBF
International Rectifier
MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl
Data Sheet
0-1: $0.34
1-25: $0.19
25-100: $0.12
100-250: $0.11
IRLML6402TR
IRLML6402TR

MOSFET P-CH 20V 3.7A SOT-23
Data Sheet
Negotiable