(China (Mainland))
Product Summary
The IRLMS5703 is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRLMS5703 absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ -10V: -2.3A; (2)ID @ TA = 70℃ Continuous Drain Current, VGS @- 10V: -1.9 A; (3)IDM Pulsed Drain Current: -13A; (4)PD @TA = 25℃ Power Dissipation: 1.7 W; (5)Linear Derating Factor: 13 mW/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (8)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150℃.
Features
IRLMS5703 features: (1)Generation V Technology; (2)Micro6 Package Style; (3)Ultra Low Rds(on); (4)P-Channel MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRLMS5703 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRLMS5703TR |
|
MOSFET P-CH 30V 2.3A 6-TSOP |
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRLMS5703TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl |
Data Sheet |
|
|
||||||||||||
