(China (Mainland))
Product Summary
The IRLMS6702TRPBF is a HEXFET power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRLMS6702TRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRLMS6702TRPBF absolute maximum ratings: (1)ID at TA=25℃, continuous drain current, VGS at -4.5V: -2.4A; (2)ID at ID at TA=70℃, continuous drain current, VGS at -4.5V: -1.9A; (3)IDM, pulsed drain current: -13A; (4)PD, power dissipation: 1.7W; (5)linear derating factor: 13mW/℃; (6)VGS, gate-to-source voltage: ±12V; (7)Tj, Tstg, junction and storage temperature range: -55 to 150℃.
Features
IRLMS6702TRPBF features: (1)generation V technology; (2)micro6 package astyle; (3)ultra low RDS(on); (4)P-channel MOSFET.
Diagrams
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 IRLMS6702TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -2.3A 200mOhm 5.8nC LogLvl |
Data Sheet |
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