(China (Mainland))
Product Summary
The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. The 2N60 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Parametrics
2N60 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Gate-Source Voltage, VGSS: ±30 V; (3)Avalanche Current, IAR: 2.0 A; (4)Drain Current: Continuous, ID: 2.0 A; Pulsed, IDM: 8.0 A; (5)Avalanche Energy: Single Pulsed, EAS: 140 mJ; Repetitive, EAR: 4.5 mJ; (6)Peak Diode Recovery, dv/dt: 4.5 V/ns; (7)Junction Temperature, TJ: +150℃; (8)Operating Temperature, TOPR: -55 to +150℃; (9)Storage Temperature, TSTG: -55 to +150℃.
Features
2N60 features: (1)RDS(ON) = 5Ω@VGS = 10V; (2)Ultra Low gate charge (typical 9.0nC); (3)Low reverse transfer capacitance (CRSS = typical 5.0 pF); (4)Fast switching capability; (5)Avalanche energy specified; (6)Improved dv/dt capability, high ruggedness.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 2N60 |
Other |
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Data Sheet |
Negotiable |
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2N6027 |
Central Semiconductor |
SCRs Prog Uni-Junction |
Data Sheet |
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2N6027RLRA |
ON Semiconductor |
SCRs 40V 300mW PUT |
Data Sheet |
Negotiable |
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2N6036G |
ON Semiconductor |
Transistors Darlington 4A 80V Bipolar Power PNP |
Data Sheet |
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2N6043G |
ON Semiconductor |
Transistors Darlington 8A 60V Bipolar Power NPN |
Data Sheet |
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2N6038 |
Central Semiconductor |
Transistors Darlington NPN Pwr Darlington |
Data Sheet |
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2N6042 |
Central Semiconductor |
Transistors Darlington PNP Darl SW |
Data Sheet |
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2N6040 |
Central Semiconductor |
Transistors Darlington PNP Darl SW |
Data Sheet |
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