Product Summary

The BCW60C is an NPN Silicon AF Transistor.

Parametrics

BCW60C absolute maximum ratings: (1)Collector-emitter voltage VCEO: 32V; (2)Collector-base voltage VCBO: 32V; (3)Emitter-base voltage VEBO: 5V; (4)DC collector current IC: 100 mA; (5)Peak collector current ICM: 200mA; (6)Peak base current IBM: 200mA; (7)Total power dissipation, TS = 71℃ Ptot: 330 mW; (8)Junction temperature Tj: 150℃; (9)Storage temperature Tstg: -65 to 150℃; (10)Junction - soldering point1) RthJS: ≦240 K/W.

Features

BCW60C features: (1)For AF input stages and driver applications; (2)High current gain; (3)Low collector-emitter saturation voltage; (4)Low noise between 30 Hz and 15 kHz; (5)Complementary types: BCW61, BCX71 (PNP).

Diagrams

BCW60C block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BCW60C T/R
BCW60C T/R
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-7
Data Sheet
Negotiable 
BCW60C,215
BCW60C,215
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-7
Data Sheet
0-1: $0.04
1-25: $0.04
25-100: $0.03
100-250: $0.03
BCW60C,235
BCW60C,235
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-11
Data Sheet
0-1: $0.04
1-25: $0.03
25-100: $0.03
100-250: $0.03
BCW60CLT1
BCW60CLT1
Other

Data Sheet
Negotiable 
BCW60CMTF
BCW60CMTF
Fairchild Semiconductor
Transistors Bipolar (BJT) SOT-23 NPN GP AMP
Data Sheet
Negotiable 
BCW60CT116
BCW60CT116
ROHM Semiconductor
Transistors Bipolar (BJT) NPN 32V 200MA
Data Sheet
Negotiable 
BCW60CTA
BCW60CTA
Diodes Inc. / Zetex
Transistors Bipolar (BJT) -
Data Sheet
Negotiable 
BCW60CTC
BCW60CTC
Diodes Inc. / Zetex
Transistors Bipolar (BJT) -
Data Sheet
Negotiable