(China (Mainland))
Product Summary
The BF1005S is a Silicon N-Channel MOSFET Tetrode.
Parametrics
BF1005S absolute maximum ratings: (1)Drain-source voltage VDS: 8 V; (2)Continuous drain current ID: 25 mA; (3)Gate 1/ gate 2-source current ±IG1/2SM: 10; (4)Gate 1 (external biasing) +VG1SE: 3 V; (5)Total power dissipation, Ptot: 200mW; (6)Storage temperature Tstg: -55 to 150℃; (7)Channel temperature Tch: 150℃.
Features
BF1005S features: (1)For low noise, high gain controlled input stages up to 1 GHz; (2)Operating voltage 5 V; (3)Integrated biasing network.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 BF1005S |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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BF1005S |
Other |
|
Data Sheet |
Negotiable |
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BF1009 |
Other |
|
Data Sheet |
Negotiable |
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BF10-10Q |
3M Electronic Specialty |
Terminals BF10-10Q 25/BAG BS-33-10 85323 |
Data Sheet |
Negotiable |
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BF10-10L |
3M Electronic Specialty |
Terminals BF10-10L 50/BAG BS-33-10 85323 |
Data Sheet |
Negotiable |
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BF10-8Q |
3M Electronic Specialty |
Terminals BF10-8Q 25/BAG BS-33-8 85315 |
Data Sheet |
Negotiable |
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BF1012 |
Other |
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Data Sheet |
Negotiable |
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