Product Summary
The DA28F640J5-150 is a 5 Volt Intel StrataFlash Memory. The benefits of it include: more density in less space, lowest cost-per-bit NOR devices, support for code and data storage, and easy migration to future devices. The DA28F640J5-150 contains high-density memories organized as 8 Mbytes or 4Mwords (64-Mbit) and 4 Mbytes or 2 Mwords (32-Mbit). The device can be accessed as 8- or 16-bit words. The DA28F640J5-150 incorporates a Write Buffer of 32 bytes (16 words) to allow optimum programming performance. By using the Write Buffer, data is programmed in buffer increments. This feature can improve system program performance by up to 20 times over non-Write Buffer writes.
Parametrics
DA28F640J5-150 absolute maximum ratings: (1)Temperature under Bias Expanded:–20℃ to +70℃; (2)Storage Temperature:–65℃ to +125℃; (3)VoltageOnAnyPin(exceptRP#):–2.0V to +7.0V ; (4)RP# Voltage with Respect to GND during Lock-Bit Configuration Operations:–2.0V to +14.0V ; (5)Output Short Circuit Current 100 mA .
Features
DA28F640J5-150 features: (1)High-Density Symmetrically-Blocked Architecture: 64 128-Kbyte Erase Blocks (64 M), 32 128-Kbyte Erase Blocks (32 M); (2)4.5 V–5.5 V VCC Operation: 2.7 V–3.6 V and 4.5 V–5.5 V I/O Capable; (3)120 ns Read Access Time (32 M), 150 ns Read Access Time (64 M); (4)Absolute Protection with VPEN =GND; (5)Flexible Block Locking; (6)Block Erase/Program Lockout during Power Transitions; (7)Industry-Standard Packaging:SSOP Package (32, 64 M), TSOP Package (32 M); (8)Cross-Compatible Command Support: Intel Basic Command Set, Common Flash Interface, Scalable Command Set; (9)32-Byte Write Buffer:6 μs per Byte Effective Programming Time; (10)6,400,000 Total Erase Cycles (64 M), 3,200,000 Total Erase Cycles (32 M):100,000 Erase Cycles per Block; (11)Automation Suspend Options: Block Erase Suspend to Read, Block Erase Suspend to Program; (12)System Performance Enhancements:STS StatusOutput; (13)Operating Temperature –20℃ to + 85℃ (–40℃ to +85℃ on.25 micron ETOXVI) process technology parts).