Product Summary

The IRLMS1902TR is a HEXFET power MOSFET from international rectifoer utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRLMS1902TR absolute maximum ratings: (1)ID at Ta=25℃, continuous drain current, VGS at 10V: 3.2A; (2)ID at Ta=70℃, continuous drain current, VGS at 10V: 2.6A; (3)IDM, pulsed drain current: 18A; (4)PD, power dissipation: 13mW; (5)linera derating factor: 4.3mW/℃; (6)VGS, gate to source voltage: ±12V; (7)Tj, Tstg, junction and storage temperature range: -55 to 150℃.

Features

IRLMS1902TR features: (1)generation V technology; (2)Micro6 package style; (3)ultra low RDS(on); (4)N-channel MOSFET.

Diagrams

IRLMS1902TR block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLMS1902TR
IRLMS1902TR

MOSFET N-CH 20V 3.2A 6-TSOP
Data Sheet
0-1: $0.96
1-10: $0.72
10-100: $0.44
100-1000: $0.36
IRLMS1902TRPBF
IRLMS1902TRPBF
International Rectifier
MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl
Data Sheet
0-1: $0.37
1-25: $0.22
25-100: $0.15
100-250: $0.13