(China (Mainland))
Product Summary
The IS41LV16105B-50TL is a 1048576 x 16-bit high-performance CMOS Dynamic Random Access Memorie. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16105B-50TL ideal for use in 16-, 32-bit wide data bus systems.
Parametrics
IS41LV16105B-50TL absolute maximum ratings: (1)Voltage on Any Pin Relative to GND: –0.5 to +4.6 V; (2)Supply Voltage: –0.5 to +4.6 V; (3)Output Current: 50 mA; (4)Power Dissipation: ; (5)Commercial Operation Temperature: 0 to +70 °C; (6)Extended Temperature: –30 to +85 °C; (7)Industrial Temperature: –40 to +85 °C; (8)Storage Temperature: –55 to +125 °C.
Features
IS41LV16105B-50TL features: (1)TTL compatible inputs and outputs; tristate I/O; (2)Refresh Interval: 1024 cycles/16 ms; (3)Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden; (4)JEDEC standard pinout; (5)Single power supply: 3.3V ± 10%; (6)Byte Write and Byte Read operation via two CAS; (7)Extended Temperature Range: -30 °C to +85 °C; (8)Industrial Temperature Range: -40 °C to +85 °C; (9)Lead-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IS41LV16105B-50TL |
ISSI |
DRAM 16M 1Mx16 50ns |
Data Sheet |
Negotiable |
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IS41LV16105B-50TLI |
ISSI |
DRAM 16M 1Mx16 50ns |
Data Sheet |
Negotiable |
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IS41LV16105B-50TL-TR |
ISSI |
DRAM 16M 1Mx16 50ns |
Data Sheet |
Negotiable |
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|
IS41LV16105B-50TLI-TR |
ISSI |
DRAM 16M 1Mx16 50ns |
Data Sheet |
Negotiable |
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