(China (Mainland))
Product Summary
The SI2300 is a kind of 20V N-Channel Enhancement-Mode MOSFET.
Parametrics
SI2300 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 20V; (2)Gate-Source Voltage, VGS: ± 12V; (3)Continuous Drain Current, ID: 2.3A; (4)Pulsed Drain Current, IDM: 8A; (5)Maximum Power Dissipation, PD: TA = 25℃: 1.25W; TA = 75℃: 0.8W; (6)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150 ℃; (7)Junction-to-Ambient Thermal Resistance (PCB mounted), RθJA: 78 ℃/W.
Features
SI2300 features: (1)Advanced trench process technology; (2)High Density Cell Design For Ultra Low On-Resistance; (3)High Power and Current handing capability; (4)Ideal for Li ion battery pack applications.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI2300 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
SI2300DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 3.6A N-CH MOSFET |
Data Sheet |
|
|
||||||||||||
