(China (Mainland))
Product Summary
The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. The 7N60 is usually used at high speed switching applications in switching power supplies and adaptors.
Parametrics
7N60 absolute maximum ratings: 10N60 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Gate-Source Voltage, VGSS: ± 30 V; (3)Avalanche Current, IAR: 7.4 A; (4)Drain Current: Continuous, ID: 7.4 A; Pulsed, IDM: 29.6 A; (5)Avalanche Energy: Single Pulsed, EAS: 530 mJ; Repetitive, EAR: 14.2 mJ; (6)Peak Diode Recovery, dv/dt: 4.5 V/ns; (7)Power Dissipation, PD: TO-220/TO-262/TO-263: 142W; TO-220F/TO-220F1: 48W; TO-220F2: 50W; (8)Junction Temperature, TJ: +150℃; (9)Operating Temperature, TOPR: -55 to +150℃; (10)Storage Temperature, TSTG: -55 to +150℃.
Features
7N60 features: (1)RDS(ON) = 1.0Ω @VGS = 10V; (2)Ultra Low Gate Charge (Typical 29 nC ); (3)Low Reverse Transfer Capacitance ( CRSS = typical 16pF ); (4)Fast Switching Capability; (5)Avalanche Energy Tested; (6)Improved dv/dt Capability, High Ruggedness.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 7N60L |
Other |
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Data Sheet |
Negotiable |
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7N60A |
Other |
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Data Sheet |
Negotiable |
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7N60 |
Other |
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Data Sheet |
Negotiable |
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