Product Summary
The BFR181W is an NPN Silicon RF Transistor.
Parametrics
BFR181W absolute maximum ratings: (1)Collector-emitter voltage VCEO 12 V; (2)Collector-emitter voltage VCES 20V; (3)Collector-base voltage VCBO 20V; (4)Emitter-base voltage VEBO 2V; (5)Collector current IC 20 mA; (6)Base current IB: 2mA; (7)Total power dissipation Ptot 175 mW; (8)Junction temperature Tj 150℃; (9)Ambient temperature TA -65to 150℃; (10)Storage temperature Tstg -65 to 150℃.
Features
BFR181W features: (1)For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA; (2)fT = 8 GHz, F = 1.45 dB at 900 MHz.
Diagrams

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(China (Mainland))










