(China (Mainland))
Product Summary
The IRLMS2002TRPBF is an N-Channel MOSFET from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
Parametrics
IRLMS2002TRPBF absolute maximum ratings: (1)VDS Drain- Source Voltage: 20 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ 4.5V: 6.5A; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ 4.5V: 5.2 A; (4)IDM Pulsed Drain Current: 20A; (5)PD @TA = 25℃ Power Dissipation: 2.0W; (6)PD @TA = 70℃ Power Dissipation: 1.3W; (7)Linear Derating Factor: 0.016 W/℃; (8)VGS Gate-to-Source Voltage: ± 12 V; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
IRLMS2002TRPBF features: (1)Ultra Low On-Resistance; (2)N-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)2.5V Rated.
Diagrams
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 IRLMS2002TRPBF |
International Rectifier |
MOSFET MOSFT 20V 6.5A 30mOhm 15nC Log Lvl |
Data Sheet |
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