Product Summary

The FDC658P is a P-Channel Logic Level MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDC658P is well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Parametrics

FDC658P absolute maximum ratings: (1)VDSS Drain-Source Voltage: -30 V; (2)VGSS Gate-Source Voltage - Continuous: ±20 V; (3)ID Drain Current: -4 A; (4)PD Maximum Power Dissipation: 1.6 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150℃.

Features

FDC658P features: (1)-4 A, -30 V. RDS(ON)= 0.050Ω @ VGS = -10 V; RDS(ON)= 0.075Ω @ VGS = -4.5 V; (2)Low gate charge (8nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Diagrams

FDC658P block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDC658P
FDC658P
Fairchild Semiconductor
MOSFET SSOT-6 P-CH -30V
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDC6000NZ
FDC6000NZ
Fairchild Semiconductor
MOSFET Dual N-Channel 2.5V Spec PowerTrench
Data Sheet
Negotiable 
FDC6000NZ_F077
FDC6000NZ_F077
Fairchild Semiconductor
MOSFET 2.5V DUAL N-CH
Data Sheet
Negotiable 
FDC6020C
FDC6020C
Fairchild Semiconductor
MOSFET Complementary PowerTrench
Data Sheet
Negotiable 
FDC6020C_F077
FDC6020C_F077
Fairchild Semiconductor
MOSFET Complementary PwrTrh
Data Sheet
Negotiable 
FDC602P
FDC602P
Fairchild Semiconductor
MOSFET P-Ch PowerTrench Specified 2.5V
Data Sheet
0-1: $0.29
1-25: $0.23
25-100: $0.17
100-250: $0.15
FDC602P_F095
FDC602P_F095
Fairchild Semiconductor
MOSFET -20V -5.5A P-CH POWERTRENCH
Data Sheet
Negotiable